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STW58N65DM2AG

N-CHANNEL MOSFET

STW58N65DM2AG Features

* Order code STW58N65DM2AG VDS 650 V RDS(on) max. 0.065 Ω ID 48 A PTOT 360 W

* Designed for automotive applications and AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely

STW58N65DM2AG General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STW58N65DM2AG Datasheet (265.06 KB)

Preview of STW58N65DM2AG PDF

Datasheet Details

Part number:

STW58N65DM2AG

Manufacturer:

STMicroelectronics ↗

File Size:

265.06 KB

Description:

N-channel mosfet.
STW58N65DM2AG Automotive-grade N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO.

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STW58N65DM2AG N-CHANNEL MOSFET STMicroelectronics

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