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STW58N60DM2AG

N-CHANNEL MOSFET

STW58N60DM2AG Features

* Order code STW58N60DM2AG VDS 600 V RDS(on) max. 0.060 Ω ID 50 A PTOT 360 W 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2) G(1) S(3) AM15572v1_no_tab

* Designed for automotive applications and AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and in

STW58N60DM2AG General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STW58N60DM2AG Datasheet (597.52 KB)

Preview of STW58N60DM2AG PDF

Datasheet Details

Part number:

STW58N60DM2AG

Manufacturer:

STMicroelectronics ↗

File Size:

597.52 KB

Description:

N-channel mosfet.

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STW58N60DM2AG N-CHANNEL MOSFET STMicroelectronics

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