STW68N60M6

N-CHANNEL POWER MOSFET

STMicroelectronics

STW68N60M6 Features

* Order code VDS RDS(on) max. STW68N60M6 600 V 41 mΩ

* Reduced switching losses

* Lower RDS(on) per area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected Applications

* Switching applications

STW68N60M6 General Description

(3) AM01475V1 The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area impr.

STW68N60M6 Datasheet (449.69 KB)