STW68N65DM6-4AG

N-Channel MOSFET

STMicroelectronics

STW68N65DM6-4AG Features

* Order code STW68N65DM6-4AG VDS 650 V RDS(on) max. 39 mΩ ID 72 A Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB)

* Designed for automotive applications

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capa

STW68N65DM6-4AG General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching beh.

STW68N65DM6-4AG Datasheet (256.58 KB)