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STW6NB100
N - CHANNEL 1000V - 2.3Ω - 5.4A - TO-247 PowerMESH™ MOSFET
TYPE STW 6NB100
s s s s s s
V DSS 1000 V
R DS(on) < 2.8 Ω
ID 5.4 A
TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
DESCRIPTION Using the latest high voltage technology, STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STW6NB100 Datasheet
