STW65N045M9-4

N-channel Power MOSFET

STMicroelectronics

STW65N045M9-4 Features

* Gate(4) Driver source(3) 2 34 1 TO247-4 Drain(1, TAB) Power source(2) ND1TPS2DS3G4 Order code VDS RDS(on) max. ID STW65N045M9-4 650 V 45 mΩ 54 A

* Worldwide best FOM RDS(on)

* Qg among silicon-based devices

* Higher VDSS rating

* Higher dv/dt capability

STW65N045M9-4 General Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure..

STW65N045M9-4 Datasheet (351.44 KB)