STW65N023M9-4

N-channel Power MOSFET

STMicroelectronics

STW65N023M9-4 Features

* Order code VDS RDS(on) max. ID STW65N023M9-4 650 V 23.0 mΩ 92

* Worldwide best FOM RDS(on)

* Qg among silicon-based devices

* Higher VDSS rating

* Higher dv/dt capability

* Excellent switching performance thanks to the extra driving source pin

* Eas

STW65N023M9-4 General Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. .

STW65N023M9-4 Datasheet (427.83 KB)