Datasheet4U Logo Datasheet4U.com

STW65N023M9-4 - N-channel Power MOSFET

Datasheet Summary

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.

Features

  • Order code VDS RDS(on) max. ID STW65N023M9-4 650 V 23.0 mΩ 92.
  • Worldwide best FOM RDS(on).
  • Qg among silicon-based devices.
  • Higher VDSS rating.
  • Higher dv/dt capability.
  • Excellent switching performance thanks to the extra driving source pin.
  • Easy to drive.
  • 100% avalanche tested Gate(4) Driver source(3).

📥 Download Datasheet

Datasheet preview – STW65N023M9-4

Datasheet Details

Part number STW65N023M9-4
Manufacturer STMicroelectronics
File Size 427.83 KB
Description N-channel Power MOSFET
Datasheet download datasheet STW65N023M9-4 Datasheet
Additional preview pages of the STW65N023M9-4 datasheet.

📁 Similar Datasheet

  • STW60N10 - N-CHANNEL MOSFET (ST Microelectronics)
  • STW60NE10 - N-CHANNEL MOSFET (ST Microelectronics)
  • STW60NM50N - N-Channel MOSFET (INCHANGE)
  • STW62NM60N - N-Channel MOSFET (INCHANGE)
  • STW69N65M5 - N-Channel MOSFET (INCHANGE)
  • STW6N95K5 - N-Channel 900V Power MOSFET (VBsemi)
  • STW6NA80 - N-CHANNEL MOSFET (ST Microelectronics)
  • STW6NA90 - N-CHANNEL MOSFET (ST Microelectronics)
  • STW6NB100 - N-CHANNEL MOSFET (ST Microelectronics)
  • STW6NB90 - N-CHANNEL MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STW65N023M9-4 Datasheet N-channel 650 V, 19.9 mΩ typ., 92 A MDmesh M9 Power MOSFET in a TO247-4 package 2 34 1 TO247-4 Drain(1, TAB) Features Order code VDS RDS(on) max. ID STW65N023M9-4 650 V 23.0 mΩ 92 • Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance thanks to the extra driving source pin • Easy to drive • 100% avalanche tested Gate(4) Driver source(3) Applications • High efficiency switching applications Power source(2) ND1TPS2DS3G4 Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.
Published: |