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STW6NC90Z - N-CHANNEL MOSFET

Datasheet Summary

Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW6NC90.

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Datasheet Details

Part number STW6NC90Z
Manufacturer STMicroelectronics
File Size 243.81 KB
Description N-CHANNEL MOSFET
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N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW6NC90Z s s s s s s STW6NC90Z VDSS 900 V RDS(on) < 2.5 Ω ID 5.2A TYPICAL RDS(on) = 2.1Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
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