STW6NC90Z - N-CHANNEL MOSFET

ST Microelectronics

STW6NC90Z Datasheet Preview — Preview of STW6NC90Z PDF

Datasheet Details

Part number	STW6NC90Z
Manufacturer	STMicroelectronics ↗
File Size	243.81 KB
Description	N-CHANNEL MOSFET
Datasheet	STW6NC90Z_STMicroelectronics.pdf

STW6NC90Z Product details

Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW6NC90.

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Published: Aug 11, 2005 |