Description
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These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power
Features
- 1
3 2 1
TO-3PF
3 2
1
TO-247 TO-247 long leads
Order codes VDS @ TJmax RDS(on) max ID
STFW45N65M5 STW45N65M5
710 V
0.078 Ω 35 A
STWA45N65M5.
- Worldwide best RDS(on).
- area.
- Higher VDSS rating and high dv/dt capability.
- Excellent switching performance.
- 100% avalanche tested
Figure 1. Internal schematic diagram
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