STWA70N60DM2

N-CHANNEL POWER MOSFET

STMicroelectronics

STWA70N60DM2 Features

* Order code VDS STWA70N60DM2 600 V RDS(on) max. 0.042 Ω ID PTOT 66 A 446 W

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected

STWA70N60DM2 General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STWA70N60DM2 Datasheet (304.66 KB)

STWA70N60DM2 Datasheet Preview — Preview of STWA70N60DM2 PDF

Datasheet Details

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STWA70N60DM2

Manufacturer:

STMicroelectronics ↗

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304.66 KB

Description:

N-channel power mosfet.
STWA70N60DM2 N-channel 600 V, 0.037 Ω typ., 66 A MDmesh™ DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data 3 2 1 TO-247 lo.

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STWA70N60DM2 N-CHANNEL POWER MOSFET STMicroelectronics

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STWA70N60DM2 Features

STWA70N60DM2 General Description

Datasheet Details

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