VND3NV04-1 Datasheet, Mosfet, STMicroelectronics

VND3NV04-1 Features

• Mosfet Type VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 RDS(on) 120 mΩ Ilim 3.5 A Vclamp 40 V
• Linear current limitation
• Thermal shutdown
• Short circuit protection <

PDF File Details

Part number:

VND3NV04-1

Manufacturer:

STMicroelectronics ↗

File Size:

303.14kb

Download:

📄 Datasheet

Description:

Fully autoprotected power mosfet. The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics™ VIPower™ M0-3 Technology, intende

VND3NV04-1 Application

• Applications Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can

TAGS

VND3NV04-1

STMicroelectronics

📁 Related Datasheet

VND3NV04 - FULLY AUTOPROTECTED POWER MOSFET (STMicroelectronics)
VNN3NV04, VNS3NV04 VND3NV04, VND3NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 RDS(on) 120.

VND05B - DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY (STMicroelectronics)
.. ® VND05B / VND05B (011Y) / VND05B (012Y) DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VND05B VND05B (011Y) VND05.

VND05BSP - ISO HIGH SIDE SMART POWER SOLID STATE RELAY (STMicroelectronics)
.. ® VND05BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VND05BSP s V DSS 40 V R DS(on ) 0.2 Ω I OUT 1.6 A V CC 26 V s .

VND10B - DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY (STMicroelectronics)
VND10B DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY Table 1. General Features Figure 1. Package Type VDSS RDS(on) In(1) VCC VND10B 4.

VND10BSP - ISO HIGH SIDE SMART POWER SOLID STATE RELAY (STMicroelectronics)
VND10BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VND10BSP s V DSS 40 V R DS(on ) 0.1 Ω I OUT 3.4 A V CC 26 V s s s s s s OUTPUT CURREN.

VND10N06 - fully autoprotected Power MOSFET (STMicroelectronics)
VND10N06 VND10N06-1 OMNIFET fully autoprotected Power MOSFET Features Max on-state resistance (per ch.) Current limitation (typ) Drain-Source clam.

VND10N06-1 - fully autoprotected Power MOSFET (STMicroelectronics)
VND10N06 VND10N06-1 OMNIFET fully autoprotected Power MOSFET Features Max on-state resistance (per ch.) Current limitation (typ) Drain-Source clam.

VND14NV04 - fully autoprotected Power MOSFET (STMicroelectronics)
VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 OMNIFET II fully autoprotected Power MOSFET Features TYPE VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 R.

VND14NV04-1 - fully autoprotected Power MOSFET (STMicroelectronics)
VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 OMNIFET II fully autoprotected Power MOSFET Features TYPE VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 R.

VND1NV04 - fully autoprotected Power MOSFET (STMicroelectronics)
® VND1NV04 / VNN1NV04 / VNS1NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND1NV04 VNN1NV04 VNS1NV04 RDS(on) 250 mΩ Ilim 1.7 A Vclamp .