VND10B Datasheet - STMicroelectronics

VND10B DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

uThe VND10B is a monolithic device made using dSTMicroelectronics VIPower Technology, rointended for driving resistive or inductive loads Pwith one side grounded. This device has two channels, and a common diagnostic. Built-in tethermal shut-down protects the chip from over letemperature and short c.

VND10B Features

* Figure 1. Package Type VDSS RDS(on) In(1) VCC VND10B 40 V 0.1 Ω 3.4 A 26 V )Note: 1. In= Nominal current according to ISO definition for high t(sside automotive switch. The Nominal Current is the current at Tc = 85 °C for battery voltage of 13V which produces a voltage drop of 0.5 V. duc

VND10B_STMicroelectronics.pdf