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VND10N06-1

fully autoprotected Power MOSFET

VND10N06-1 Features

* Max on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage RDS(on) Ilim VCLAMP 0.3Ω 10A 60V

* Linear current limitation

* Thermal shutdown

* Short circuit protection

* Integrated clamp

* Low current drawn from input pin

* Logic level input thres

VND10N06-1 General Description

The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

VND10N06-1 Datasheet (557.79 KB)

Preview of VND10N06-1 PDF

Datasheet Details

Part number:

VND10N06-1

Manufacturer:

STMicroelectronics ↗

File Size:

557.79 KB

Description:

Fully autoprotected power mosfet.

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VND10N06-1 fully autoprotected Power MOSFET STMicroelectronics

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