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VND10N06

fully autoprotected Power MOSFET

VND10N06 Features

* Max on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage RDS(on) Ilim VCLAMP 0.3Ω 10A 60V

* Linear current limitation

* Thermal shutdown

* Short circuit protection

* Integrated clamp

* Low current drawn from input pin

* Logic level input thres

VND10N06 General Description

The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

VND10N06 Datasheet (557.79 KB)

Preview of VND10N06 PDF

Datasheet Details

Part number:

VND10N06

Manufacturer:

STMicroelectronics ↗

File Size:

557.79 KB

Description:

Fully autoprotected power mosfet.

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VND10N06 fully autoprotected Power MOSFET STMicroelectronics

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