VND10N06 - fully autoprotected Power MOSFET

STMicroelectronics

VND10N06 Datasheet Preview — Preview of VND10N06 PDF

Datasheet Details

Part number	VND10N06
Manufacturer	STMicroelectronics ↗
File Size	557.79 KB
Description	fully autoprotected Power MOSFET
Datasheet	VND10N06_STMicroelectronics.pdf

VND10N06 Product details

Description

The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications.

Features

Max on-state resistance (per ch. ) Current limitation (typ) Drain-Source clamp voltage RDS(on) Ilim VCLAMP 0.3Ω 10A 60V.
Linear current limitation.
Thermal shutdown.
Short circuit protection.
Integrated clamp.
Low current drawn from input pin.
Logic level input threshold.
ESD protection.
Schmitt trigger on input.
High noise immunity 3 1 DPAK TO-252 IPAK TO-251 3 2 1.

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Published: Apr 16, 2005 |