VNS3NV04D
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Fully autoprotected power mosfet. O The VNS3NV04D is a device formed by two - monolithic OMNIFET II chips housed in a ) standard SO-8 package. The OMNIFET II are t(s d
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VNS3NV04 - FULLY AUTOPROTECTED POWER MOSFET
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VNN3NV04, VNS3NV04 VND3NV04, VND3NV04-1
OMNIFET II fully autoprotected Power MOSFET
Features
Type
VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1
RDS(on) 120.
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SO-8
Linear current limitation Thermal shutdow.
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Datasheet - production data
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Features
VNN3NV04P-E VNS3NV04P-E
OMNIFET II fully autoprotected Power MOSFET
Datasheet − production data
Type
VNN3NV04P-E VNS3NV04P-E
RDS(on) 120 m.
VNS14NV04 - fully autoprotected Power MOSFET
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R.
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VNS14NV04P-E
OMNIFET II fully autoprotected Power MOSFET
Features
Type VNS14NV04P-E
RDS(on) 35 mΩ
Ilim 12 A
Vclamp 40 V
■ Linear current limit.
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®
VND1NV04 / VNN1NV04 / VNS1NV04
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
TYPE VND1NV04 VNN1NV04 VNS1NV04
RDS(on) 250 mΩ
Ilim 1.7 A
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.
VNS1NV04D - FULLY AUTOPROTECTED POWER MOSFET
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VNS1NV04D
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
TYPE VNS1NV04D
(*) Per each device
RDS(on) 250 mΩ (*)
Ilim 1.7 A (*)
Vclamp 40 V (*)
.
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VNS1NV04P-E - fully autoprotected Power MOSFET
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VNN1NV04P-E, VNS1NV04P-E
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Features
Parameter
Symbol Value
Max on-state resistance (per ch.) Current lim.