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VNS3NV04D-E

Automotive OMNIFET II fully autoprotected Power MOSFET

VNS3NV04D-E Features

* Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 120 m 3.5 A 40 V

* AEC-Q100 qualified

* ECOPACK: lead free and RoHS compliant Description The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard

VNS3NV04D-E General Description

The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics VIPower M03 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications. Built-in thermal shutdown, .

VNS3NV04D-E Datasheet (335.08 KB)

Preview of VNS3NV04D-E PDF

Datasheet Details

Part number:

VNS3NV04D-E

Manufacturer:

STMicroelectronics ↗

File Size:

335.08 KB

Description:

automotive omnifet ii fully autoprotected power mosfet.
VNS3NV04DP-E Automotive OMNIFET II fully autoprotected Power MOSFET Datasheet - production data SO-8
* Linear current limitation
* Thermal.

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VNS3NV04D-E Automotive OMNIFET fully autoprotected Power MOSFET STMicroelectronics

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