VNS3NV04D-E Datasheet, Mosfet, STMicroelectronics

VNS3NV04D-E Features

• Mosfet Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 120 m 3.5 A 40 V
• AEC-Q100 qualified
• ECOPACK: lead free an

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VNS3NV04D-E

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STMicroelectronics ↗

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📄 Datasheet

Description:

automotive omnifet ii fully autoprotected power mosfet. The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed

VNS3NV04D-E Application

• Applications Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can

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VNS3NV04D-E

STMicroelectronics

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