Datasheet Details
- Part number
- VNS3NV04DP-E
- Manufacturer
- STMicroelectronics ↗
- File Size
- 378.24 KB
- Datasheet
- VNS3NV04DP-E-STMicroelectronics.pdf
- Description
- Automotive OMNIFET II fully autoprotected Power MOSFET
VNS3NV04DP-E Description
VNS3NV04DP-E Automotive OMNIFET II fully autoprotected Power MOSFET Datasheet - production data SO-8 * Linear current limitation * Thermal.
The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package.
VNS3NV04DP-E Features
* Max on-state resistance (per ch. ) Current limitation (typ) Drain-source clamp voltage
RON ILIMH VCLAMP
120 m 3.5 A 40 V
* AEC-Q100 qualified
VNS3NV04DP-E Applications
* Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring
voltage at the input pin.
Package SO-8
Table 1. Device summary Order codes
Tray
Tape and reel
VNS3NV04DP-E
VNS3NV04DPTR-E
July 2023
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