SPN230N06 Datasheet (SYNC POWER)

SPN230N06, N-Channel MOSFET

The SPN230N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier ap

SPN230N06 Features

* 60V/190A, RDS(ON)=3.0mΩ@VGS=10V

* High density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220 package design PIN CONFIGURATION TO-220 PART MARKING 2021/10/28 Ver 01 Page 1 SPN230N06 N-Channel Enhancement Mode MOSFE