SPN230N06

N-Channel MOSFET

SYNC POWER

SPN230N06 Features

* 60V/190A, RDS(ON)=3.0mΩ@VGS=10V

* High density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220 package design PIN CONFIGURATION TO-220 PART MARKING 2021/10/28 Ver 01 Page 1 SPN230N06 N-Channel Enhancement Mode MOSFE

SPN230N06 General Description

The SPN230N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier ap.

SPN230N06 Datasheet (455.76 KB)

SPN230N06 Datasheet Preview — Preview of SPN230N06 PDF

Datasheet Details

Part number:

SPN230N06

Manufacturer:

SYNC POWER

File Size:

455.76 KB

Description:

N-channel mosfet.

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SPN230N06 N-Channel MOSFET SYNC POWER

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SPN230N06 Features

SPN230N06 General Description

Datasheet Details

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Description:

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