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SPN2318

N-Channel MOSFET

SPN2318 Features

* 40V/3.9A,RDS(ON)=56mΩ@VGS=10V

* 40V/3.5A,RDS(ON)=62mΩ@VGS=4.5V

* 40V/2.0A,RDS(ON)=95mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-3L package design PIN CONFIGURATION ( SOT-23-3

SPN2318 General Description

The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

SPN2318 Datasheet (359.24 KB)

Preview of SPN2318 PDF

Datasheet Details

Part number:

SPN2318

Manufacturer:

SYNC POWER

File Size:

359.24 KB

Description:

N-channel mosfet.

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SPN2318 N-Channel MOSFET SYNC POWER

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