SPN2318W Datasheet (SYNC POWER)

SPN2318W, N-Channel MOSFET

The SPN2318W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

SPN2318W Features

* 40V/3.9A,RDS(ON)=56mΩ@VGS=10V

* 40V/3.5A,RDS(ON)=62mΩ@VGS=4.5V

* 40V/2.0A,RDS(ON)=95mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design PIN CONFIGURATION ( SOT-23 ) PA