SPN8205W Datasheet (SYNC POWER) - Common-Drain Dual N-Channel MOSFET

SPN8205W, Common-Drain Dual N-Channel MOSFET

The SPN8205W is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

SPN8205W Features

* 20V/5.0A,RDS(ON)=24mΩ@VGS=4.5V

* 20V/3.0A,RDS(ON)=34mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TSSOP

* 8 package design APPLICATIONS

* Power Management in Note book

* Por