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SPN8205W

Common-Drain Dual N-Channel MOSFET

SPN8205W Features

* 20V/5.0A,RDS(ON)=24mΩ@VGS=4.5V

* 20V/3.0A,RDS(ON)=34mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TSSOP

* 8 package design APPLICATIONS

* Power Management in Note book

* Por

SPN8205W General Description

The SPN8205W is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage.

SPN8205W Datasheet (500.61 KB)

Preview of SPN8205W PDF

Datasheet Details

Part number:

SPN8205W

Manufacturer:

SYNC POWER

File Size:

500.61 KB

Description:

Common-drain dual n-channel mosfet.

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TAGS

SPN8205W Common-Drain Dual N-Channel MOSFET SYNC POWER

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