SPN8206 Common-Drain Dual N-Channel MOSFET

SYNC POWER

Description

SPN8206 6Common-Drain Dual N-Channel Enhancement Mode MOSFET .
The SPN8206 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench.

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Datasheet Specifications

Part number: SPN8206
Manufacturer: SYNC POWER
File Size: 540.09 KB
Datasheet: SPN8206-SYNCPOWER.pdf
Description: Common-Drain Dual N-Channel MOSFET

Features

* 20V/5.0A,RDS(ON)=8.2mΩ@VGS=4.5V
* 20V/3.0A,RDS(ON)=11.0mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* ESD capability 2KV

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter PIN CONFIGURATION(TDFN2x3
* 6L) PART MARKING 2020/05/14 Ver.2 Page 1 SPN8206 6Common-Drain Dual N-Channel Enhancement Mode

SPN8206 Distributors

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SPN8206 Common-Drain Dual N-Channel MOSFET SYNC POWER

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