SPN8842 - N-Channel MOSFET
The SPN8842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
The SPN8842 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM con
SPN8842 Features
* PIN CONFIGURATION(PPAK5x6-8L)
* 40V/100A,RDS(ON)=1.7mΩ@VGS=10V
* 40V/100A,RDS(ON)=2.6mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* PPAK5x6-8L package design PART MARKING 2022/8/18 Ver 2