SPN8848 - Dual N-Channel Enhancement Mode MOSFET
The SPN8848 is the Dual N-Channel Enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly s
SPN8848 Features
* 40V/10A, RDS(ON )= 8.5mΩ@VGS=10V
* 40V/8.0A, RDS(ON)=12mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6-8L) PART MARKING 2024/01/09 Ver0
