* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-So
STB820S
SamHop Microelectronics
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N-channel enhancement mode field effect transistor.
STB820S
Sa mHop Microelectronics C orp.
STP820SGreen
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMAR.
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