* Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -P
STP60L60F Datasheet (114.33 KB)
STP60L60F
SamHop
114.33 KB
N-channel enhancement mode field effect transistor.
Gr Pr STP60L60F Ver 1.0 SamHop Microelectronics Corp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 32A R DS(ON.
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