* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 36A R DS(ON) (m Ω) Max 27 @ VGS=10V 42 @ VGS=4.5V D D G S G D S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C un
STP60L60 Datasheet (255.75 KB)
STP60L60
SamHop
255.75 KB
N-channel logic level enhancement mode field effect transistor.
STB/P60L60
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
FEATUR.
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