STP60N043DM9 Datasheet - STMicroelectronics

STP60N043DM9 N-CHANNEL Power MOSFET

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which .

STP60N043DM9 Features

* Order code VDS RDS(on) max. ID STP60N043DM9 600 V 43 mΩ 56 A

* Fast-recovery body diode

* Worldwide best RDS(on) per area among silicon-based fast recovery devices

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely

STP60N043DM9-STMicroelectronics.pdf