STP60N043DM9 - N-CHANNEL Power MOSFET
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode.
The silicon-based DM9 technology benefits from a multi-drain manufacturing process which
STP60N043DM9 Features
* Order code VDS RDS(on) max. ID STP60N043DM9 600 V 43 mΩ 56 A
* Fast-recovery body diode
* Worldwide best RDS(on) per area among silicon-based fast recovery devices
* Low gate charge, input capacitance and resistance
* 100% avalanche tested
* Extremely
