SSH6N80 Datasheet, mosfet equivalent, Samsung Electronics

PDF File Details

Part number:

SSH6N80

Manufacturer:

Samsung Electronics

File Size:

271.35kb

Download:

📄 Datasheet

Description:

N-channel power mosfet.

Datasheet Preview: SSH6N80 📥 Download PDF (271.35kb)
Page 2 of SSH6N80 Page 3 of SSH6N80

TAGS

SSH6N80
N-Channel
Power
MOSFET
Samsung Electronics

📁 Related Datasheet

SSH6N80AS - Advanced Power MOSFET (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c .

SSH6N55 - (SSH6N55 / SSH6N60) N-Channel Power MOSFETs (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

SSH6N60 - (SSH6N55 / SSH6N60) N-Channel Power MOSFETs (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

SSH6N70 - N-Channel Power MOSFET (Samsung Electronics)
.

SSH6N70A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSH6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-3P Avalanche Rugged T.

SSH6N90A - Advanced Power MOSFET (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c .

SSH6N90A - Advanced Power MOSFET (Fairchild Semiconductor)
.

SSH10N60A - advanced power MOSFET (Fairchild)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

SSH10N60B - 600V N-Channel MOSFET (Fairchild)
SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.

SSH10N70 - N-Channel Power MOSFET (Samsung)
.. .. .. .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts