IRF532 Datasheet, Mosfet, Samsung semiconductor

PDF File Details

Part number:

IRF532

Manufacturer:

Samsung semiconductor

File Size:

370.16kb

Download:

📄 Datasheet

Description:

N-channel power mosfet.

TAGS

IRF532

Samsung semiconductor

📁 Related Datasheet

IRF530 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF530 FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge.

IRF530 - N-Channel MOSFET (Motorola Inc)
.

IRF530 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (STMicroelectronics)
IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF530 100 V <0.16 Ω 14 A s TYPICA.

IRF530 - Power MOSFET (International Rectifier)
.

IRF530 - N-Channel Power MOSFET (Fairchild Semiconductor)
Data Sheet IRF530 February 2002 [ /Title (IRF53 0, RF1S5 30SM) /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 1.

IRF530 - N-Channel MOSFET (Harris Corporation)
.. .. .. .. .. .

IRF530 - Power MOSFET (Vishay)
.vishay. IRF530 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .

IRF530 - Power Field Effect Transistor (ON Semiconductor)
IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to .

IRF5305 - Power MOSFET (International Rectifier)
PD - 91385B IRF5305 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-C.

IRF5305 - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor IRF5305,IIRF5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche test.