K1S64161CC Datasheet (Samsung semiconductor) - 4Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S64161CC, 4Mx16 bit Page Mode Uni-Transistor Random Access Memory

The K1S64161CC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.

The device supports 4 page read operation and Industrial temperature range.

The device supports dual chip selection for user interface.

The device also supports internal Temperature Compensated Self

www.DataSheet4U.com K1S64161CC Document Title 4Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No.

History 0.0 Initial Draft - Design Target Revised - Filled out ICC2 and ISB1 value ICC2(max) : 40mA ISB1(max,< 40°C) : 120µA ISB1(max,< 85°C) : 180µA - Changed tOH from min.5ns into min.3ns - Added tCSHP(CS High Pulse Width) as min.10ns - Added tWHP(WE High Pulse Width) as min.5ns Finalize - Added Lead Free Product Draft Date April 12, 2004 Remark Advance