K1S64161CC Datasheet - Samsung semiconductor

K1S64161CC 4Mx16 bit Page Mode Uni-Transistor Random Access Memory

The K1S64161CC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also supports internal Temperature Compensated Self .

www.DataSheet4U.com K1S64161CC Document Title 4Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft - Design Target Revised - Filled out ICC2 and ISB1 value ICC2(max) : 40mA ISB1(max,< 40°C) : 120µA ISB1(max,< 85°C) : 180µA - Changed tOH from min.5ns into min.3ns - Added tCSHP(CS High Pulse Width) as min.10ns - Added tWHP(WE High Pulse Width) as min.5ns Finalize - Added Lead Free Product Draft Date April 12, 2004 Remark Advance.

K1S64161CC_Samsungsemiconductor.pdf