K1S6416BCC Datasheet (Samsung semiconductor) - 4Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S6416BCC, 4Mx16 bit Page Mode Uni-Transistor Random Access Memory

The K1S6416BCC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.

The device supports 4 page read operation and Industrial temperature range.

The device supports dual chip selection for user interface.

The device also supports internal Temperature Compensated Self

www.DataSheet4U.com K1S6416BCC Document Title 4Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No.

History 0.0 Initial Draft - Design Target Finalize Draft Date November 3, 2004 Remark Preliminary 1.0 April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics.

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