Datasheet Specifications
- Part number
- K4R761869A
- Manufacturer
- Samsung semiconductor
- File Size
- 360.11 KB
- Datasheet
- K4R761869A_Samsungsemiconductor.pdf
- Description
- 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
Description
K4R761869A Direct RDRAM™ 576Mbit RDRAM(A-die) 1M x 18bit x 32s banks Direct RDRAMTM www.DataSheet4U.com Version 1.41 January 2004 Page -1 Versi.
Features
* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 320 K4R761869A- xCxx Figure 1: DireApplications
* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 576Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 32M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1200 MHz transferK4R761869A Distributors
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