K4R761869A Datasheet, rdramtm equivalent, Samsung semiconductor

K4R761869A Features

  • Rdramtm for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for add

PDF File Details

Part number:

K4R761869A

Manufacturer:

Samsung semiconductor

File Size:

360.11kb

Download:

📄 Datasheet

Description:

576mbit rdram (a-die) 1m x 18bit x 32s banks direct rdramtm. Signal I/O Type CMOSa # Pins center 2 Description Serial input/output. Pins for reading from and writing to the control registers usi

Datasheet Preview: K4R761869A 📥 Download PDF (360.11kb)
Page 2 of K4R761869A Page 3 of K4R761869A

K4R761869A Application

  • Applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 576Mbit RD

TAGS

K4R761869A
576Mbit
RDRAM
A-die
18bit
32s
banks
Direct
RDRAMTM
Samsung semiconductor

📁 Related Datasheet

K4R271669A - 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM (Samsung semiconductor)
K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 R.

K4R271669B - 256K x 16/18 bit x 32s banks Direct RDRAMTM (Samsung semiconductor)
K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Versio.

K4R271669E - 128Mbit RDRAM(E-die) (Samsung semiconductor)
K4R271669E Direct RDRAM™ 128Mbit RDRAM(E-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R2.

K4R271669F - 128Mbit RDRAM(F-die) (Samsung semiconductor)
K4R271669F Direct RDRAM™ 128Mbit RDRAM(F-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 .

K4R441869A - 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM (Samsung semiconductor)
K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 R.

K4R441869B - 256K x 16/18 bit x 32s banks Direct RDRAMTM (Samsung semiconductor)
K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Versio.

K4R571669D - 256/288Mbit RDRAM(D-die) (Samsung semiconductor)
K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..

K4R881869 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM (Samsung semiconductor)
K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev. 0.9.

K4R881869D - 256/288Mbit RDRAM(D-die) (Samsung semiconductor)
K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..

K4R881869M - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM (Samsung semiconductor)
K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev. 0.9.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts