K4R761869A Datasheet (Samsung semiconductor) - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM

K4R761869A, 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM

Signal I/O Type CMOSa # Pins center 2 Description Serial input/output.

Pins for reading from and writing to the control registers using a serial access protocol.

Also used for power management.

Command input.

Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the control reg

K4R761869A Direct RDRAM™ 576Mbit RDRAM(A-die) 1M x 18bit x 32s banks Direct RDRAMTM www.DataSheet4U.com Version 1.41 January 2004 Page -1 Version 1.41 Jan.

2004 K4R761869A Change History Direct RDRAM™ Version 1.4( Sept.

2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 256/288Mb D-die Version 1.4 Version 1.41(Jan.

2004) - Add the part numbers for lead free package - Correct the Package total thickness www.DataS

K4R761869A Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 320 K4R761869A- xCxx Figure 1: Dire