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K4R761869A Datasheet - Samsung semiconductor

576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM

K4R761869A Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 320 K4R761869A- xCxx Figure 1: Dire

K4R761869A General Description

Signal I/O Type CMOSa # Pins center 2 Description Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management. Command input. Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the control reg.

K4R761869A Datasheet (360.11 KB)

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Datasheet Details

Part number:

K4R761869A

Manufacturer:

Samsung semiconductor

File Size:

360.11 KB

Description:

576mbit rdram (a-die) 1m x 18bit x 32s banks direct rdramtm.
K4R761869A Direct RDRAM™ 576Mbit RDRAM(A-die) 1M x 18bit x 32s banks Direct RDRAMTM www.DataSheet4U.com Version 1.41 January 2004 Page -1 Versi.

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K4R761869A 576Mbit RDRAM A-die 18bit 32s banks Direct RDRAMTM Samsung semiconductor

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