K4S281632C-TP Datasheet - Samsung semiconductor

K4S281632C-TP 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

The K4S281632C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock.

K4S281632C-TP Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S281632C-TP Datasheet (47.25 KB)

K4S281632C-TP Datasheet Preview — Preview of K4S281632C-TP PDF

Datasheet Details

Part number:

K4S281632C-TP

Manufacturer:

Samsung semiconductor

File Size:

47.25 KB

Description:

128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl.

📁 Related Datasheet

K4S281632C-TC1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S281632C-TC1L 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S281632C-TC75 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S281632C-TI 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S281632C-TI1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S281632C-TI1L 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S281632C-TI75 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S281632C-TL1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

TAGS

K4S281632C-TP 128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

K4S281632C-TP Distributor