Datasheet4U Logo Datasheet4U.com

K4S281632C-TP1H

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

K4S281632C-TP1H Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S281632C-TP1H General Description

The K4S281632C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock.

K4S281632C-TP1H Datasheet (47.25 KB)

Preview of K4S281632C-TP1H PDF

Datasheet Details

Part number:

K4S281632C-TP1H

Manufacturer:

Samsung semiconductor

File Size:

47.25 KB

Description:

128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl.
K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001
* Samsung Electronics reserves th.

📁 Related Datasheet

K4S281632C-TP1L - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri.

K4S281632C-TP - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri.

K4S281632C-TP75 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri.

K4S281632C-TC1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632C CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to.

K4S281632C-TC1L - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632C CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to.

K4S281632C-TC75 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632C CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to.

K4S281632C-TI - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri.

K4S281632C-TI1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri.

TAGS

K4S281632C-TP1H 128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

Image Gallery

K4S281632C-TP1H Datasheet Preview Page 2 K4S281632C-TP1H Datasheet Preview Page 3

K4S281632C-TP1H Distributor