K4S283233F Description
K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S283233F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high.
K4S283233F Features
* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle
K4S283233F Applications
* ORDERING INFORMATION
Part No. K4S283233F-F(H)E/N/G/C/L/F60 K4S283233F-F(H)E/N/G/C/L/F75 K4S283233F-F(H)E/N/G/C/L/F1H K4S283233F-F(H)E/N/G/C/L/F1L Max Freq. 166MHz(CL=3) 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package
- F(H)E/N/G : Normal / Low/ Low
📁 Related Datasheet
📌 All Tags
