K4S283233F-FE, K4S Datasheet - Samsung semiconductor

K4S283233F-FE, K4S, 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs.
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CAS latency (1, 2 & 3).
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Burst length (1, 2, 4, 8 & Full page).
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Burst type (Sequential & Interleave).

* EMRS cycle

Applications

* ORDERING INFORMATION Part No.
K4S283233F-F(H)E/N/G/C/L/F60 K4S283233F-F(H)E/N/G/C/L/F75 K4S283233F-F(H)E/N/G/C/L/F1H K4S283233F-F(H)E/N/G/C/L/F1L Max Freq.
166MHz(CL=3) 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package - F(H)E/N/G : Normal / Low/ Low

K4S-2832.pdf