K4S283233F-FHE

1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Samsung semiconductor

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Part number:

K4S283233F-FHE

Manufacturer:

Samsung semiconductor

File Size:

140.98 KB

Description:

1m x 32bit x 4 banks mobile sdram in 90fbga.
K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES * 3.0V & 3.3V powe.
The K4S283233F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576.

✔ K4S283233F-FHE Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Bur

✔ K4S283233F-FHE Application

ORDERING INFORMATION Part No. K4S283233F-F(H)E/N/G/C/L/F60 K4S283233F-F(H)E/N/G/C/L/F75 K4S283233F-F(H)E/N

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K4S283233F-F75 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.

K4S283233F-FE - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.

K4S283233F-C - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.

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K4S283233F-FHE 32Bit Banks Mobile SDRAM 90FBGA Samsung semiconductor

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✔ K4S283233F-FHE Features

✔ K4S283233F-FHE Application

K4S283233F-FHE Distributor