K4S283233F-F1H Datasheet, 90fbga, Samsung semiconductor

✔ K4S283233F-F1H Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Bur

✔ K4S283233F-F1H Application

ORDERING INFORMATION Part No. K4S283233F-F(H)E/N/G/C/L/F60 K4S283233F-F(H)E/N/G/C/L/F75 K4S283233F-F(H)E/N

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Part number:

K4S283233F-F1H

Manufacturer:

Samsung semiconductor

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140.98 KB

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📄 Datasheet

Description:

1m x 32bit x 4 banks mobile sdram in 90fbga. The K4S283233F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated wit

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K4S283233F-F1H 32Bit Banks Mobile SDRAM 90FBGA Samsung semiconductor