The K4S283233F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c
K4S283233F-F1L Features
* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle
Datasheet Details
K4S283233F-F1L, K4S
Samsung semiconductor
140.98 KB
1m x 32bit x 4 banks mobile sdram in 90fbga.
This datasheet PDF includes multiple part numbers: K4S283233F-F1L, K4S.
Please refer to the document for exact specifications by model.
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