K4S283233F-L, K4S 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Samsung semiconductor

Description

K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S283233F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high.

📥 Download Datasheet

K4S283233F-L Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S283233F-L, K4S. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: K4S283233F-L, K4S
Manufacturer: Samsung semiconductor
File Size: 140.98 KB
Datasheet: K4S-2832.pdf
Description: 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Note: This datasheet PDF includes multiple part numbers: K4S283233F-L, K4S.
Please refer to the document for exact specifications by model.

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

Applications

* ORDERING INFORMATION Part No. K4S283233F-F(H)E/N/G/C/L/F60 K4S283233F-F(H)E/N/G/C/L/F75 K4S283233F-F(H)E/N/G/C/L/F1H K4S283233F-F(H)E/N/G/C/L/F1L Max Freq. 166MHz(CL=3) 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package - F(H)E/N/G : Normal / Low/ Low

K4S283233F-L Distributors

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K4S 32Bit Banks Mobile SDRAM 90FBGA Samsung semiconductor

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