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K4S561633F-C

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

K4S561633F-C Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4S561633F-C General Description

The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S561633F-C Datasheet (114.04 KB)

Preview of K4S561633F-C PDF

Datasheet Details

Part number:

K4S561633F-C

Manufacturer:

Samsung semiconductor

File Size:

114.04 KB

Description:

4m x 16bit x 4 banks mobile sdram in 54boc.

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K4S561633F-G - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC (Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.

K4S561633F-L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC (Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.

K4S561633F-N - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC (Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.

K4S561633F-X - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC (Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.

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K4S561633F-C 16Bit Banks Mobile SDRAM 54BOC Samsung semiconductor

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