K4S561633F-G
Samsung semiconductor
114.04kb
4m x 16bit x 4 banks mobile sdram in 54boc. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated wit
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K4S561633F-C - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-E - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-F1H - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-F75 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-N - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-X - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F-XE - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.
K4S561633F - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
(Samsung semiconductor)
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed addr.