Datasheet4U.com

K4S561633F-E - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

Samsung semiconductor

📥 Download Datasheet

K4S561633F-E Datasheet Preview — Preview of K4S561633F-E PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: K4S561633F-E
Manufacturer: Samsung semiconductor
File Size: 114.04 KB
Datasheet: K4S561633F-E_Samsungsemiconductor.pdf
Description: 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

K4S561633F-E Product details

Description

The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

📁 K4S561633F-E Similar Datasheet

K4S561632C - 256Mbit SDRAM (Samsung)
K4S561632E-UC60 - SDRAM 256Mb E-die (Samsung)
K4S561632E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S561632H - 256Mb H-Die SDRAM (Samsung Electronics)
K4S560432E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S560832E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S510432D - 512Mb D-die SDRAM (Samsung)
K4S510832D - 512Mb D-die SDRAM (Samsung)

Other Datasheets by Samsung semiconductor

K4S561633F-C - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-F1H - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-F75 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-G - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

Published: Apr 7, 2005 |