K4S561633F-F75 Datasheet (Samsung semiconductor) - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

K4S561633F-F75, 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c

K4S561633F-F75 Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle