K4S561633F-XE Datasheet, 54boc, Samsung semiconductor

✔ K4S561633F-XE Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Bur

✔ K4S561633F-XE Application

ORDERING INFORMATION Part No. K4S561633F-X(Z)E/N/G/C/L/F75 K4S561633F-X(Z)E/N/G/C/L/F1H K4S561633F-X(Z)E/N

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Part number:

K4S561633F-XE

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Samsung semiconductor

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📄 Datasheet

Description:

4m x 16bit x 4 banks mobile sdram in 54boc. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated wit

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K4S561633F-XE 16Bit Banks Mobile SDRAM 54BOC Samsung semiconductor