Datasheet Specifications
- Part number
- K4S640832E
- Manufacturer
- Samsung semiconductor
- File Size
- 126.89 KB
- Datasheet
- K4S640832E_Samsungsemiconductor.pdf
- Description
- 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Description
K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept.2001 * Samsung Electronics reserves the right.Features
* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled aApplications
* ORDERING INFORMATION Part No. K4S640832E-TC/L75 K4S640832E-TC/L1H K4S640832E-TC/L1L Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54 TSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank SeK4S640832E Distributors
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