K4S640832E - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

Datasheet Details

Part number	K4S640832E
Manufacturer	Samsung semiconductor
File Size	126.89 KB
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S640832E_Samsungsemiconductor.pdf

The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMOS SDRAM.

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Published: Apr 7, 2005 |