K4S640832E-TL1H Datasheet - Samsung semiconductor

K4S640832E-TL1H, 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept.2001 * Samsung Electronics reserves the right.
The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high pe.

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Datasheet Details

Part number:

K4S640832E-TL1H

Manufacturer:

Samsung semiconductor

File Size:

126.89 KB

Description:

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a

Applications

* ORDERING INFORMATION Part No. K4S640832E-TC/L75 K4S640832E-TC/L1H K4S640832E-TC/L1L Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54 TSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank Se

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K4S640832E-TL1H 64Mbit SDRAM 8Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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