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K4S640832E-TC75 Datasheet - Samsung semiconductor

K4S640832E-TC75 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock c.

K4S640832E-TC75 Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a

K4S640832E-TC75_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4S640832E-TC75

Manufacturer:

Samsung semiconductor

File Size:

126.89 KB

Description:

64mbit sdram 2m x 8bit x 4 banks synchronous dram lvttl.

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K4S640832E-TC75 K4S640832E-TC75 64Mbit SDRAM 8Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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