K4S641632H-UC60 - 64Mb H-die SDRAM Specification 54 TSOP-II

Samsung semiconductor

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Datasheet Details

Part number	K4S641632H-UC60
Manufacturer	Samsung semiconductor
File Size	146.34 KB
Description	64Mb H-die SDRAM Specification 54 TSOP-II
Datasheet	K4S641632H-UC60_Samsungsemiconductor.pdf

K4S641632H-UC60 Product details

Description

The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms r.

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Published: Mar 5, 2010 |