K4S641632H-UC60 64Mb H-die SDRAM Specification 54 TSOP-II

Samsung semiconductor

Description

SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * S.
The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2.

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Datasheet Specifications

Part number: K4S641632H-UC60
Manufacturer: Samsung semiconductor
File Size: 146.34 KB
Datasheet: K4S641632H-UC60_Samsungsemiconductor.pdf
Description: 64Mb H-die SDRAM Specification 54 TSOP-II

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* Ordering Information Part No. K4S640432H-UC(L)75 K4S640832H-UC(L)75 K4S641632H-UC(L)60 K4S641632H-UC(L)70 K4S641632H-UC(L)75 4Mb x 16 Orgainization 16Mb x 4 8Mb x 8 Max Freq. 133MHz(CL=3) 133MHz(CL=3) 166MHz(CL=3) 143MHz(CL=3) 133MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package Organization 16Mx4

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📁 Related Datasheet

K4S641632H K4S641632N K4S640832N K4S643232H-TC-L50 K4S643232H-TC-L55 K4S643232H-TC-L60

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K4S641632H-UC60 64Mb H-die SDRAM Specification TSOP-II Samsung semiconductor

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